| Autor: |
Takaaki Imai, Takaaki Imai, Akira Fujimoto, Akira Fujimoto, Masanori Okuyama, Masanori Okuyama, Yoshihiro Hamakawa, Yoshihiro Hamakawa |
| Zdroj: |
Japanese Journal of Applied Physics; February 1996, Vol. 35 Issue: 2 p1073-1073, 1p |
| Abstrakt: |
Si surface potential and strain at the Si-SiO2structure with a thermally grown or a native SiO2ultrathin film have been characterized by photoreflectance (PR) spectroscopy. The surface potentials of Si-SiO2structures are determined from the modulation light intensity dependence of the PR signal intensity. Although the signal intensity decreases drastically with increasing SiO2film thickness, it can be increased by applying dc bias voltage and increasing the surface potential of Si. The strains at the Si surface have been obtained by an analysis of the transition energy shift in the SiO2/Si structure with a thermally oxidized ultrathin film. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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