| Autor: |
Naoki Ohtani, Naoki Ohtani, Hidenori Mimura, Hidenori Mimura, Makoto Hosoda, Makoto Hosoda, Koji Tominaga, Koji Tominaga, Toshihide Watanabe, Toshihide Watanabe, Kenzo Fujiwara, Kenzo Fujiwara |
| Zdroj: |
Japanese Journal of Applied Physics; February 1996, Vol. 35 Issue: 2 p1302-1302, 1p |
| Abstrakt: |
We have investigated the influence of type-I to type-II transition by an applied electric field on photoluminescence and carrier transport by time-of-flight experiments in GaAs/AlAs short-period superlattices. Type-I to type-II transition was confirmed by observing degenerated photoluminescence spectra caused by ?-Xmixing. The rise time of the time-resolved photocurrent was found to increase by the type-I to type-II transition. This result clearly shows that the tunneling time through type-II alignment is longer than that through type-I alignment. The delayed carrier transport is most likely caused by ?-X-? transfer. The results suggest that in type-II superlattices, carriers prefer ?-X-? transfer to ?-? sequential tunneling. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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