| Autor: |
Sumi, Tatsumi, Judai, Yuji, Hirano, Kanji, Ito, Toyoji, Mikawa, Takumi, Takeo, Masato, Azuma, Masamichi, Hayashi, Shin-ichiro, Uemoto, Yasuhiro, Arita, Koji, Nasu, Toru, Nagano, Yoshihisa, Inoue, Atsuo, Matsuda, Akihiro, Fuji, Eiji, Shimada, Yasuhiro, Otsuki, Tatsuo |
| Zdroj: |
Japanese Journal of Applied Physics; February 1996, Vol. 35 Issue: 2 p1516-1516, 1p |
| Abstrakt: |
Nonvolatile memory utilizing ferroelectric material is expected to be the ultimate memory due to its theoretical low power operation and fast access. We integrated a ferroelectric thin film using a standard complementary metal-oxide-semiconductor (CMOS) process and evaluated its basic characteristics and reliability including endurance and imprint effect. The film was prepared using a spin-on sol-gel method. A ferroelectric thin film formed using liquid source misted chemical deposition (LSMCD) was found to have almost the same characteristics as those of the film formed by the sol-gel method. No effects of the ferroelectric process on the CMOS transistors were observed. Design of ferroelectric memory cells and applications of the ferroelectric nonvolatile memory have been reviewed. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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