| Autor: |
Toyota, Yoshitaka, Tsuji, Hiroshi, Yasuhito Gotoh, Yasuhito Gotoh, Junzo Ishikawa, Junzo Ishikawa |
| Zdroj: |
Japanese Journal of Applied Physics; December 1995, Vol. 34 Issue: 12 p6487-6487, 1p |
| Abstrakt: |
The negative-ion implantation method has the advantage that the charging voltage of an isolated electrode, or electrically insulated conductive material, stays as low as at most +10 V during implantation without any charge neutralization. The significant parameters, the energy distribution and the yield of secondary electrons in negative-ion implantation, have been measured in the energy range below 40 keV. The results show that the energy distribution, which is independent of ion energy in shape, has a low energy peak together with a long tail extending toward the high-energy region, and that the yield increases with ion energy. Furthermore, the equilibrium charging-voltage equation of an isolated electrode during negative-ion implantation is presented. The charging voltages estimated according to the equation are found to be in good agreement with those measured directly with a high-input-impedance voltmeter. It is also demonstrated that the charging voltage is proportional to the yield and to ion velocity in the linear region of the kinetic electron emission. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
