| Autor: |
Huibing Mao, Huibing Mao, Jiaming Zhang, Jiaming Zhang, Wei Lu, Wei Lu, Shuechu Shen, Shuechu Shen |
| Zdroj: |
Japanese Journal of Applied Physics; October 1995, Vol. 34 Issue: 10 p5637-5637, 1p |
| Abstrakt: |
We report in this paper the photoluminescence (PL) investigation of a partly doped asymmetric coupled quantum well (ACQW) structure. The dependence of non-resonant tunneling rate on excitation power for different Al0.28Ga0.72As interbarrier thicknesses is studied in detail. The PL intensity from a 20 nm Al0.2Ga0.8As well is much larger than that from a 5.5 nm Si-doped GaAs well when the interbarrier is thick (>12 nm). This result indicates that photo excited carriers are preferentially relaxed toward the wide well, which has larger state density than the doped narrow well. The competition among different processes of intersubband relaxations is discussed in connection with the PL spectra. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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