| Autor: |
Hazumi, Shigeki, Asano, Takayuki, Hattori, Masaya, Nakashima, Hiroshi, Kobayashi, Ichizo, Masaru Okada, Masaru Okada |
| Zdroj: |
Japanese Journal of Applied Physics; September 1995, Vol. 34 Issue: 9 p5086-5086, 1p |
| Abstrakt: |
Lanthanum-modified lead zirconate titanate (PLZT) thin films (50-200 nm) were deposited on Pt/SiO2/Si substrates by metalorganic chemical vapor deposition (MOCVD). The electrical properties of the films were investigated as functions of the La content and substrate temperature. Ferroelectric PZT films were obtained at a substrate temperature as low as 500° C, and their electric characteristics were improved with increasing substrate temperature. La was adequately solid-dissolved into the PZT above 650° C. PLZT(15/45/55) films having a thickness of 100 nm were found to have good properties for application to capacitors of dynamic random access memory (DRAM), i.e., effective charge density of 80 fF/µ m2, dielectric constant of 1000, SiO2equivalent thickness of 0.4 nm and leakage current density of 5×10-8A/cm2. La addition to PZT was effective in reducing the leakage current with an increase in the registration rate. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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