| Autor: |
Horikawa, Tsuyoshi, Makita, Tetsuro, Kuroiwa, Takeharu, Noboru Mikami, Noboru Mikami |
| Zdroj: |
Japanese Journal of Applied Physics; September 1995, Vol. 34 Issue: 9 p5478-5478, 1p |
| Abstrakt: |
The dielectric relaxation of (Ba0.5Sr0.5)TiO3thin films with high electric resistivity is investigated. The films are deposited by an rf-magnetron sputtering method in an atmosphere of argon and oxygen. The dielectric dispersion of the films is measured in the frequency range of 10-2-106Hz. It is found that the dielectric constant ?slightly decreases with frequency, following the relationship of d?/d(log 10f)?-0.01?, and the dielectric loss is almost constant at less than 1% in the measured frequency range. This type of dielectric relaxation causes absorption current which is inversely proportional to time, as the result of the dielectric aftereffect. In a dynamic random access memory (DRAM) operation, the dielectric relaxation would result in less than 10% loss of storage charge during the refresh cycle, and the film's DC leakage less affects the device operation. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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