| Autor: |
Sung Woo Hwang, Sung Woo Hwang, Henri Lezec, Henri Lezec, Toshitsugu Sakamoto, Toshitsugu Sakamoto, Kazuo Nakamura, Kazuo Nakamura |
| Zdroj: |
Japanese Journal of Applied Physics; August 1995, Vol. 34 Issue: 8 p4426-4426, 1p |
| Abstrakt: |
Staircase current-voltage (I-V) characteristics, observed at 77 K in narrow 2DEG channels irradiated by a single line scan of a focused ion beam (FIB), is reported in detail. These staircases are interpreted as evidence of single electron tunneling through a naturally occurring specific Coulomb island in the random potential fluctuations created by FIB damage. Clear comparison is made between the I-V's taken from wide channels and those from narrow channels. Based on orthodox calculations of the I-Vcharacteristics, it is shown that highly asymmetric tunnel junctions are needed to explain our data. This is consistent with the random nature of the potential landscape in the FIB damaged region. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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