| Autor: |
Yoshimura, Kuniaki, Ishinabe, Minoru, Okamura, Soichiro, Takeyo Tsukamoto, Takeyo Tsukamoto |
| Zdroj: |
Japanese Journal of Applied Physics; May 1995, Vol. 34 Issue: 5 p2425-2425, 1p |
| Abstrakt: |
Ferroelectric Bi4Ti3O12thin films were prepared by the metal-organic chemical vapor deposition (MOCVD) method at atmospheric pressure using Bi(o-C7H7)3and Ti(i-OC3H7)2(DPM)2as metalorganic sources. Assist Ar gas flow rate effects on the growth of the thin films were also examined. Thin films obtained were characterized by XRD analysis, SEM, AFM and D-E hysteresis loop observations. Most of the single-phase Bi4Ti3O12thin films with c-axis orientation were deposited on Pt/Ti/SiO2/Si and Pt substrates above 500° C. Completely c-axis-oriented Bi4Ti3O12thin films were prepared on Pt plates at 600° C, which showed good ferroelectric properties: remanent polarization of 1.0 µ C/cm2, coercive field of 18 kV/cm and leakage current on the order of 10-9A/cm2. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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