| Autor: |
Levenets, V. V., Beklemishev, V. I., Kirilenko, E. P., Makhonin, I. I., Trifonov, A. Yu., Loginov, B. A., Protasenko, V. V. |
| Zdroj: |
Japanese Journal of Applied Physics; April 1995, Vol. 34 Issue: 4 p1723-1723, 1p |
| Abstrakt: |
Si(100) surfaces were modified by means of enhanced RCA procedure with " HBF4-last" and "HF-last". Nulling ellipsometric (NE) and secondary ion mass spectrometric (SIMS) measurements revealed that HBF4-treated Si surface is more strongly passivated by hydrogen and fluorine than HF-treated one: the oxidation rate of the HBF4-treated Si surfaces in air was found to be lower than that of the HF-treate surface. Scanning tunneling microscope (STM) images of HBF4-cleaned surface after 18 h storage in air were quite stable during observation, scanning could be easily performed over a wide area on every plot we chose. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
