| Autor: |
Hidaka, Osamu, Morizuka, Kouhei, Hiroshi Mochizuki, Hiroshi Mochizuki |
| Zdroj: |
Japanese Journal of Applied Physics; February 1995, Vol. 34 Issue: 2 p886-886, 1p |
| Abstrakt: |
On the double-heterojunction bipolar transistor (DHBT) with a narrow band-gap base, collector current is strongly impeded at a high current level where the base-pushout effect occurs. This phenomenon was studied in conjunction with the thermal stability of transistors. The experimental comparison of Si/SiGe/Si-DHBT with a Si bipolar junction transistor (Si-BJT) confirmed that SiGe-DHBTs are more stable with regard to thermal runaway than Si-BJTs. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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