| Autor: |
Murayama, Kazuro, Komatsu, Hitoshi, Miyazaki, Seiichi, Hirosi, Masataka |
| Zdroj: |
Japanese Journal of Applied Physics; January 1995, Vol. 34 Issue: 1 p176-176, 1p |
| Abstrakt: |
It is found that the band width of a Gaussian-like luminescence spectrum of porous Si depends strongly on chemical etching time after anodization of crystalline Si. The narrowest luminescence band observed could be explained in terms of the radiative recombination of localized excitons with strong phonon coupling, while the broader luminescence band arises from the inhomogeneous broadening due to size distribution of Si nanostructures in the porous Si. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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