| Autor: |
Okamoto, Kazuya, Doi, Masaaki, Irita, Takeshi, Nakano, Yoshiaki, Tada, Kunio |
| Zdroj: |
Japanese Journal of Applied Physics; January 1995, Vol. 34 Issue: 1 p151-151, 1p |
| Abstrakt: |
A GaAs/GaAlAs-system TE/TM mode splitter using the mode interference principle is described. Single- and double-mode waveguides are patterned by reactive ion etching after the first molecular beam epitaxy. They are then completely buried by liquid-phase epitaxy, which enables low loss propagation due to side-wall smoothness, because of the thermal deformation effect. For achieving low loss characteristics in this mode splitter, the surface treatment process before crystal growth and S-bend waveguide mask formation procedure are also optimized. Propagation loss of the single-mode waveguide is less than 1.0 dB/cm. In order to secure birefringence of the waveguide for mode splitting, upper and lower GaAlAs-cladding mol fractions are different. Finally, the fabricated device achieves the TE/TM mode splitting ratio of 8.2 dB for both polarizations. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
