| Autor: |
Tamura, Tetsuro, Takai, Kazuaki, Noshiro, Hideyuki, Kimura, Mami, Seigen Otani, Seigen Otani, Masao Yamada, Masao Yamada |
| Zdroj: |
Japanese Journal of Applied Physics; December 1994, Vol. 33 Issue: 12 pL1697-L1697, 1p |
| Abstrakt: |
The current-voltage (I-V) characteristics of capacitors using SrTiO3film were investigated. Rectification characteristics were observed, either when oxygen gas was introduced during sputter deposition of top electrodes, or when the SrTiO3film was annealed in oxygen. These I-V characteristics are attributed to blocking contacts between SrTiO3and the electrodes. It is considered that such contacts are formed because of the reduction of the crystal defects in SrTiO3films, and they have decisive influence on the leakage current of the capacitor. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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