| Autor: |
Noguchi, Takashi, Tsai, Julie A., Andrew J. Tang, Andrew J. Tang, Rafael Reif, Rafael Reif |
| Zdroj: |
Japanese Journal of Applied Physics; December 1994, Vol. 33 Issue: 12 pL1748-L1748, 1p |
| Abstrakt: |
Thin polycrystalline Si1-xGexfilms with low resistivities have been achieved by low pressure chemical vapor deposition (LPCVD) with subsequent ion implantation and thermal annealing. The sheet resistance decreased drastically as the Ge content increased to 36 atomic percent. Even at a moderate dose of 1.5×1015/cm2, a resistivity of 8.3×10-4?·cm was obtained for B+-doped samples and 3.8×10-4?·cm for P+-doped samples. Furthermore, stability of the resistivity values after sintering was confirmed. Poly-Si1-xGexcan be used for new applications in Si LSIs such as fine-patterned MOS gates or germanosilicide interconnects. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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