| Autor: |
Nakasima, Hiroshi, Hazumi, Sigeki, Kamiya, Tadashi, Kouji Tominaga, Kouji Tominaga, Masaru Okada, Masaru Okada |
| Zdroj: |
Japanese Journal of Applied Physics; September 1994, Vol. 33 Issue: 9 p5139-5139, 1p |
| Abstrakt: |
Lanthanum-modified lead zirconate titanate (PLZT) thin films (0.2-0.35 µ m) have been prepared on Pt/ SiO2/Si substrates at 650° C by the metalorganic chemical vapor deposition (MOCVD) method. The electrical properties of the films were examined as a function of lanthanum content in the range of 0-22 at.%. The remanent polarization and coercive field decreased as the La content increased in the range of 0-14 at.%, whereas they were maintained at constant values of 1 µ C/cm2and 20 kV/cm, respectively, even in the paraelectric region where La content exceeds 15 at.% in ceramics. The effective dielectric constant of 1200 was obtained at La=10 at.%, and the effective charge densities were about 30 fF/µm2when La=8-22 at.%. It has been suggested that the breakdown of the films does not occur up to about 1× 1015cycles at an access voltage of 3 V by the unipolar acceleration test. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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