| Autor: |
Muhammet, Rusul, Nakamura, Takashi, Shimizu, Masaru, Shiosaki, Tadashi |
| Zdroj: |
Japanese Journal of Applied Physics; September 1994, Vol. 33 Issue: 9 p5215-5215, 1p |
| Abstrakt: |
The effects of oxygen concentration on the growth of Bi4Ti3O12thin films by metalorganic chemical vapor deposition (MOCVD) were investigated, using Bi(C6H5)3and Ti(i-OC3H7)4precursors, c-axis-oriented Bi4Ti3O12thin films were obtained at an oxygen gas flow rate of 200 sccm and a substrate temperature of 600° C on Pt(111)/ SiO2/Si(100) substrates without Bi2Ti2O7buffer layers. This film shows remanent polarization of 1.3 µ C/cm2, coercive field of 25 kV/cm, dielectric constant of 130 and leakage current density as low as 10-8-10-7A/cm2. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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