ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer

Autor: Itoh, Satoshi, Nakayama, Norikazu, Matsumoto, Satoshi, Nagai, Masaharu, Nakano, Kazushi, Ozawa, Masafumi, Okuyama, Hiroyuki, Tomiya, Shigetaka, Ohata, Toyoharu, Ikeda, Masao, Akira Ishibashi, Akira Ishibashi, Yoshifumi Mori, Yoshifumi Mori
Zdroj: Japanese Journal of Applied Physics; July 1994, Vol. 33 Issue: 7 pL938-L938, 1p
Abstrakt: Blue-green laser diodes exhibiting continuous-wave operation during hundreds-of-seconds have been fabricated. This structure is a ZnCdSe/ZnSSe/ZnMgSSe separate-confinement heterostructure with low dislocation density of ?105cm-2in the n-ZnMgSSe cladding layer. The use of a GaAs buffer layer has lead to the decrease of dislocation density for laser-diodes, with which we have observed CW operation up to 80° C, that showed the feasibility of ZnCdSe/ZnSSe/ZnMgSSe SCH laser-diodes.
Databáze: Supplemental Index