| Autor: |
Win, Pascal, Druelle, Yves, Cordier, Yvon, Adam, Didier, Favre, Jacques, Alain Cappy, Alain Cappy |
| Zdroj: |
Japanese Journal of Applied Physics; June 1994, Vol. 33 Issue: 6 p3343-3343, 1p |
| Abstrakt: |
A new high-electron-mobility transistor (HEMT) using InAlAs/InGaAs grown by molecular beam epitaxy on GaAs has been successfully realized. This device, having an In content close to 30%, presents several advantages over conventional pseudomorphic HEMTs on GaAs as well as over lattice matched HEMTs on InP. High electron mobility with high two-dimensional electron gas density ( 25000 cm2/V·s with 3×1012cm-2at 77 K) as well as high Schottky barrier quality (Vb=0.68 V with ?= 1.1) has been obtained for this material system. A 0.4-µm-gate-length device showed an intrinsic transconductance as high as 700 mS/mm with ft=45 GHz and fmax =115 GHz while a minimum noise figure of NFmin =1.1 dB at 18 GHz has been obtained with a 0.2 µm device. This performance is, to the authors' knowledge, the first reported for submicrometer-gate metamorphic InAlAs/InGaAs/GaAs HEMTs. |
| Databáze: |
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