| Autor: |
Lin, Cheng-Tung, Pei-Fen Chou, Pei-Fen Chou, Huang-Chung Cheng, Huang-Chung Cheng |
| Zdroj: |
Japanese Journal of Applied Physics; June 1994, Vol. 33 Issue: 6 p3402-3402, 1p |
| Abstrakt: |
Excellent silicided shallow p+n junctions have been successfully achieved by the implantation of BF2+ions into thin Pd films on a Si substrate to a dose of 5×1015cm-2and subsequent low-temperature (as low as 500° C) furnace annealing. The formed junctions have been characterized for the respective implantation conditions. In this experiment, the implant energy plays the key role in obtaining a low leakage diode. Reverse current density of about 1 nA/cm2and the ideality factor of about 1.03 can be attained by the implantation of BF2+ions at 100 keV and subsequent annealing at 600° C. The junction depth is about 0.08 µm, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF2+ions into a thin Pd layer can stabilize the Pd silicide film and prevent it from forming islands during high-temperature annealing. High-temperature stability of palladium silicides and the leakage current mechanism are also discussed in this report. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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