| Autor: |
Hwang, Yun Taek, Cha, Sang Suk, Lee, Byung Chul, Lee, Young Hee, Lim, Kee Young, Suh, Eun-Kyung, Choi, Choon Tae, Hyung Jae Lee, Hyung Jae Lee |
| Zdroj: |
Japanese Journal of Applied Physics; May 1994, Vol. 33 Issue: 5 p2457-2457, 1p |
| Abstrakt: |
Unintentionally doped GaAs layers were grown on semi-insulating GaAs substrates by metal-organic chemical vapor deposition. Temperature-dependent electrical transport measurements were performed and the layer characteristics were derived by a two-layer analysis. The substrate begins to affect the layer transport properties at low temperatures, depending on the carrier density and the layer thickness. The p-type samples show two conductivity-type conversions at two different temperatures. One is a combined transport phenomenon of the layer and substrate, and the other occurs in the layer but is still influenced by the substrate. A two-band model involving light- and heavy-hole bands was adopted in analyzing the hole transport in the layer, and the light hole was determined to play a crucial role even with its very small effective mass compared to the heavy hole. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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