| Autor: |
Gavrilenko, Vladimir I., Kozlov, Igor N., Moldavskaya, Mariya D., Nikonorov, Vyacheslav V., Orlov, Lev K., Kuznetsov, Oleg A., Chernov, Alexander L. |
| Zdroj: |
Japanese Journal of Applied Physics; April 1994, Vol. 33 Issue: 4 p2386-2386, 1p |
| Abstrakt: |
Cyclotron resonance of photoexcited carriers in Ge/Ge1-xSixmultilayer strained undoped heterostructures (HSs) was investigated for the first time. Cyclotron resonance line of positive charge carriers with the effective mass mc?0.07m0corresponding to that of holes in the upper subband in the strained quantum wells in Ge layers was observed in the absorption and mm-photoconductivity spectra. The persistent photoconductivity is shown to arise after interband illumination owing to the free holes remaining in the sample. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
