| Autor: |
Xie, Ya-Hong, Fitzgerald, Eugene A., Monroe, Donald, G. Patrick Watson, G. Patrick Watson, Paul J. Silverman, Paul J. Silverman |
| Zdroj: |
Japanese Journal of Applied Physics; April 1994, Vol. 33 Issue: 4 p2372-2372, 1p |
| Abstrakt: |
We review the current status of relaxed GeSi buffer layers, high-mobility two-dimensional electron and hole gases fabricated on top of these layers, and GeSi-based field effect transistors (FETs). Recent progress in these fields is emphasized. A brief summary is then given for a variety of GeSi-based FET fabrications to date. Finally, the future prospects of GeSi-based FETs to be integrated into Si VLSI production is discussed. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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