| Autor: |
Harald Gossner, Harald Gossner, Ignaz Eisele, Ignaz Eisele, Lothar Risch, Lothar Risch |
| Zdroj: |
Japanese Journal of Applied Physics; April 1994, Vol. 33 Issue: 4 p2423-2423, 1p |
| Abstrakt: |
The growth conditions in molecular beam epitaxy (MBE) were studied for the fabrication of vertical Si-metal-oxide-semiconductor field effect transistors (MOSFET) with channel lengths down to 50 nm. The short channel length imposes severe constraints on the doping profile. MBE growth provided a steepness of 10 nm/dec for boron and 2 nm/dec for antimony. The sharpness of the doping profile was sustained throughout the process by keeping all process temperatures below 700° C. The high crystal quality and the well-defined doping profile was verified by the good performance of a triangular barrier diode. A vertical n-MOSFET with an estimated channel length of 50 nm was grown. The drain and gate characteristics were discussed for a source drain voltage regime from Usd=0 V to 1 V. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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