| Abstrakt: |
A superconductor-based three-terminal device of In/(Ba, Rb)BiO3/SrTiO3(Nb) structure was produced. The (Ba, Rb)BiO3/SrTiO3(Nb) interface is a Schottky junction with a barrier height of 1.8 eV, while the (Ba, Rb)BiO3/In interface is a junction with rectifying characteristics. The static properties of the three-terminal device as a transistor were determined in common-base and common-emitter configurations. With a base thickness of up to 50 nm, ?=0.94 and ?=10 were obtained, confirming that this device operated as a transistor. |
