| Autor: |
Gocho, Tetsuo, Ogawa, Tohru, Masakazu Muroyama, Masakazu Muroyama, Jun-ichi Sato, Jun-ichi Sato |
| Zdroj: |
Japanese Journal of Applied Physics; January 1994, Vol. 33 Issue: 1 p486-486, 1p |
| Abstrakt: |
We report a new anti-reflective layer (ARL) film for KrF excimer lasers, which makes excimer laser lithography applicable to mass production of devices with a design rule tighter than 0.35 µm. The ARL film, which is composed of SiOxNy:H, was deposited with a higher SiH4/N2O ratio than in conventional PECVD (Plasma Enhanced Chemical Vapor Deposition) conditions. The SiOxNy:H films, with optimal refractive indices, were easily deposited by varying the SiH4/N2O ratio as a PECVD parameter. Using the SiOxNy:H film to fabricate a 16MSRAM gate structure, variations in photoresist absorption were significantly reduced. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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