| Autor: |
Sugiyama, Tohru, Kuriyama, Yasuhiko, Asaka, Masayuki, Iizuka, Norio, Torakichi Kobayashi, Torakichi Kobayashi, Masao Obara, Masao Obara |
| Zdroj: |
Japanese Journal of Applied Physics; January 1994, Vol. 33 Issue: 1 p786-786, 1p |
| Abstrakt: |
Ohmic contacts to 500-Å-thick p-Al0.1Ga0.9As layer formed with a Pt/Ti/Pt/Au metal system were investigated. An extremely low contact resistivity of 4.2×10-7? ·cm2was obtained. The contact resistance increased with the increment of the Pt thickness, because the thicker the intermetallic layer becomes the thinner the AlGaAs layer beneath it, which leads to a higher contact resistance. The optimum Pt thickness was around 50 Å. Moreover, this metal scheme was thermally stable at 350° C. A high fmaxof 160 GHz was obtained for AlGaAs/GaAs HBTs using Pt/Ti/Pt/Au base electrodes. A multiplexer (MUX) lC implemented with these high-fmaxHBTs operated properly up to 40 Gbps, the highest speed ever reported. This value was restricted by the measuring instrument capability. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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