| Autor: |
Junichi Sakano, Junichi Sakano, Seijiro Furukawa, Seijiro Furukawa |
| Zdroj: |
Japanese Journal of Applied Physics; December 1993, Vol. 32 Issue: 12 p6163-6163, 1p |
| Abstrakt: |
The fabrication of p+n shallow junctions using strained grown SiGe/Si heterostructure was studied. Because of the lower chemical potential of B in SiGe, the effective diffusion constant of B reduces in the SiGe/Si interface region when B diffuses from the SiGe layer to the Si layer. We have proposed a new method for shallow junction formation using this phenomenon and have shown that the profile of implanted B in SiGe/Si system is kept shallow by thermal treatment compared to that in Si. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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