| Autor: |
Inai, Makoto, Yamamoto, Teiji, Toshihiko Takebe, Toshihiko Takebe, Toshihide Watanabe, Toshihide Watanabe |
| Zdroj: |
Japanese Journal of Applied Physics; December 1993, Vol. 32 Issue: 12 pL1718-L1718, 1p |
| Abstrakt: |
Lateral p-n junctions were grown on (111)A GaAs patterned substrates by a plane selective doping method and electroluminescence (EL) properties of the lateral p-n junctions were investigated. EL was observed along the <011> line, and the line formed a triangular pattern on the substrate. The emission spectrum had a sharp peak at 870 nm at room temperature. Even though these p-n junctions were not optimized for LED structures, the emission intensity of EL was higher than that from p-n junctions of conventional structure. These characteristics are advantages of lateral p-n junctlons grown on (111)A GaAs patterned substrates. These are the first observations of EL from (111)A GaAs lateral p-n junctions. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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