Preparation of C-Axis-Oriented Bi4Ti3O12Thin Films by Metalorganic Chemical Vapor Deposition
Autor: | Nakamura, Takashi, Muhammet, Rusul, Shimizu, Masaru, Shiosaki, Tadashi |
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Zdroj: | Japanese Journal of Applied Physics; September 1993, Vol. 32 Issue: 9 p4086-4086, 1p |
Abstrakt: | Bi4Ti3O12thin films were prepared on Pt/SiO2/Si(100), Pt/Ti/SiO2/Si(100) and sapphire (R-cut) by metalorganic chemical vapor deposition (MOCVD). Bi(C6H5)3and Ti(i-OC3H7)4were chosen as the metalorganic precursors. C-axis-oriented Bi4Ti3O12thin films were grown on Pt/SiO2/Si (100) at 550°C. These films deposited directly on the substrates exhibit high loss and exhibit very rough surface morphology. However, a Bi4Ti3O12film with a Bi2Ti2O7buffer layer on Pt/SiO2/Si(100) exhibits very smooth morphology and are highly c-axis-oriented. This film shows remanent polarization of 0.6 µC/cm2, coercive field of 13 kV/cm and dielectric constant of 180. |
Databáze: | Supplemental Index |
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