Autor: |
Munakata, Hirofumi Shimizu |
Zdroj: |
Japanese Journal of Applied Physics; September 1993, Vol. 32 Issue: 9 p3775-3775, 1p |
Abstrakt: |
The ac surface photovoltage (SPV) technique is intended for nondestructive detection of impurities in silicon (Si) wafer surfaces rinsed with various metal-contaminated water solutions. Iron (Fe)- and copper (Cu) considerably increase the ac SPVs of rinsed n-type Si wafers. This indicates that Fe and Cu induce a negative charge in the native oxide, which is similar to results previously reported for aluminum (Al) and/or Fe-contaminated Radio Corporation of America (RCA) alkaline rinses. Nickel and zinc induce a small ac SPV change, whereas Al and chromium effect no change even after exposure in air for 7 days. These results suggest that the ac SPV technique is applicable for nondestructively detecting contaminants in water-rinsed wafers. |
Databáze: |
Supplemental Index |
Externí odkaz: |
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