Characterization of Damaged Layer Using AC Surface Photovoltage in Silicon Wafers

Autor: Munakata, Hirofumi Shimizu
Zdroj: Japanese Journal of Applied Physics; September 1993, Vol. 32 Issue: 9 p3780-3780, 1p
Abstrakt: AC surface photovoltage (SPV) responds to damaged layers in n-type silicon (Si) wafers with depleted or inverted surfaces. Excited carriers recombine at broken bonds in a damaged layer, and the ac SPV is then reduced depending on whether slight or heavy damage exists at the Si surface. The ac SPV is related to the thermally modulated reflectance signal and, thus, is qualitatively applicable to nondestructive evaluation of the damaged layer.
Databáze: Supplemental Index