| Autor: |
Fujita, Kazuhisa, Yamamoto, Teiji, Toshihiko Takebe, Toshihiko Takebe, Toshihide Watanabe, Toshihide Watanabe |
| Zdroj: |
Japanese Journal of Applied Physics; July 1993, Vol. 32 Issue: 7 pL978-L978, 1p |
| Abstrakt: |
Silicon-doped Al0.3Ga0.7As layers were grown on GaAs(111)A misoriented 0-19.5° toward (100) by molecular beam epitaxy (MBE). The surface morphology was strongly affected by the off-angle of the substrates; a mirror surface was obtained when the off-angle was over 5°. Occupation sites of Si atoms were dependent on the flux ratio; at a ratio of 2, most Si atoms occupied As sites, whereas at ratios above 5, most Si atoms occupied Ga sites although there was greater compensation. The results show that the off-angle of GaAs(111)A substrates is an important factor for controlling the surface morphology and the impurity concentration of AlGaAs. |
| Databáze: |
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| Externí odkaz: |
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