| Autor: |
Ishibashi, Tadao, Fischer, Albrecht, Andreas D. Wieck, Andreas D. Wieck, Klaus H. Ploog, Klaus H. Ploog |
| Zdroj: |
Japanese Journal of Applied Physics; May 1993, Vol. 32 Issue: 5 pL742-L742, 1p |
| Abstrakt: |
We describe the electrical properties of GaAs overgrown by molecular beam epitaxy on 100 kV Ga+ion implanted substrates. Room-temperature carrier mobilities of the overgrown layers maintain good values for Ga doses up to 1014/cm2. With increasing Ga dose, the conductances of the overgrown layers shows a significant reduction, which is attributed to carrier depletion caused by ionized deep acceptors in the Ga-implanted layer. This effect can be almost entirely screened out when GaAs layers are overgrown directly on Ga-implanted semi-insulating substrates. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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