| Autor: |
Iga, Ryuzo, Takeshi Yamada, Takeshi Yamada, Hideo Sugiura, Hideo Sugiura |
| Zdroj: |
Japanese Journal of Applied Physics; April 1993, Vol. 32 Issue: 4 pL473-L473, 1p |
| Abstrakt: |
Selective growth of InGaAsP by Ar ion laser-assisted metalorganic molecular beam epitaxy is studied. Laser irradiation during the In1-xGaxAs1-yPy(x=0.28, y=0.4) growth suppresses the growth rate by about 30% of the growth rate in the nonirradiated area and the Ga composition xto about one-tenth that in the nonirradiated area at 510°C. It is found that the rise in the substrate temperature causes the suppression of both the growth rate and the Ga composition of the In1-xGaxAs1-yPyfilm. The photoluminescence (PL) wavelength of the InGaAsP/InP multiple quantum well shifts to a longer wavelength with laser irradiation during InGaAsP well growth. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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