| Autor: |
Matsumoto, Shigeyuki, Tosaka, Hiroyuki, Yoshida, Takashi, Masakazu Kobayashi, Masakazu Kobayashi, Akihiko Yoshikawa, Akihiko Yoshikawa |
| Zdroj: |
Japanese Journal of Applied Physics; January 1993, Vol. 32 Issue: 2 pL229-L229, 1p |
| Abstrakt: |
Planar doping of nitrogen into ZnSe is examined. The dependence of doping efficiency on the particular surface termination (Zn- or Se-stabilised) on (100) ZnSe is investigated through capacitance-voltage measurement and low-temperature photoluminescence (PL) spectroscopy. Using planar doping on the Zn surface, we achieved a hole concentration of 4.5×1017cm-3, and the PL spectrum is dominated by strong donor-acceptor pair (DAP) emissions. By contrast, the film planar-doped on the Se plane shows rather low hole concentration, and the spectrum is dominated by excitonic features along with very weak DAP emissions. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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