| Autor: |
Greaves, G. Neville, Dent, Andrew J., Dobson, Barry R., Kalbitzer, Siegfried, Müller, Gerhardt |
| Zdroj: |
Japanese Journal of Applied Physics; January 1993, Vol. 32 Issue: 2 p622-622, 1p |
| Abstrakt: |
X-ray absorption fine structure (XAFS) spectroscopy has been measured at glancing angles of incidence on 5×1019gallium atoms cm-3ion-implanted in amorphous silicon. The effects of preparation (ion-damaged or rf glow-discharge) of amorphous silicon are discussed. In particular, heat treatment has been investigated to examine the local structure of the dopants at various stages of annealing and recrystallisation. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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