Electron Capture on DX Centers near \varGamma-X Crossover in AlGaAs:Te
| Autor: | Itskevich, Igor E. |
|---|---|
| Zdroj: | Japanese Journal of Applied Physics; January 1993, Vol. 32 Issue: 1 p224-224, 1p |
| Abstrakt: | Relaxation of the persistent photoconductivity in AlGaAs:Te has been studied directly, in the real time, under quasihydrostatic pressure up to 11 kbar. Effect of the capture barrier broadening on the relaxation rate is reduced significantly at low electron concentration. The relaxation equation used for capture kinetics description in the wide electron concentration range appears to be not valid near the ?-X crossover. |
| Databáze: | Supplemental Index |
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