| Autor: |
Hsiaowen Lee, Hsiaowen Lee, R. Fabian W. Pease, R. Fabian W. Pease |
| Zdroj: |
Japanese Journal of Applied Physics; December 1992, Vol. 31 Issue: 12 p4474-4474, 1p |
| Abstrakt: |
Focused Ga+ions in the energy range of 25 keV to 50 keV are commonly used to remove opaque defects in chromium-on-quartz photolithographic masks. The resulting implantation of the quartz causes staining and it is necessary to etch away the stained quartz. In a phase-shifting mask, this gives rise to unacceptable phase shifts. We have investigated the use of low energy focused ions and find that not only is the depth of staining significantly reduced but the loss of transmissivity (without etching) can be reduced to a negligible level (more than 90% transmissivity) for 500 eV Ga+ions. With well-designed ion optics such ions can be focused into a 0.3 µm diameter for 1 nA current. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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