| Autor: |
Mizukami, Hiroyuki, Kazuo Tsutsui, Kazuo Tsutsui, Seijiro Furukawa, Seijiro Furukawa |
| Zdroj: |
Japanese Journal of Applied Physics; December 1991, Vol. 30 Issue: 12 p3349-3349, 1p |
| Abstrakt: |
The effect of off-orientation of substrate was investigated to improve the surface morphology and crystallinity of CaF2/Si(111) and GaAs/CaF2/Si(111) structures which were grown by molecular beam epitaxy. It was found that drastic improvement of surface morphology of the CaF2films and the GaAs films was observed by using Si(111) substrates off-oriented toward not [110] but the [001] direction. Hall measurements showed that electrical properties of the GaAs films were also improved by using these substrates. This report pointed out that selection of the direction toward which the substrate is off-oriented is very important for growth of the GaAs/CaF2/Si(111) structure which has a rotational twin, the so-called "type-B" epitaxial relation. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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