| Autor: |
Saitoh, Tadashi, Hori, Nobuyasu, Katsuyuki Suzuki, Katsuyuki Suzuki, Shigeo Iida, Shigeo Iida |
| Zdroj: |
Japanese Journal of Applied Physics; November 1991, Vol. 30 Issue: 11 pL1914-L1914, 1p |
| Abstrakt: |
Optical properties of very thin amorphous silicon films have been characterized by means of spectroscopic ellipsometry. Second derivatives of imaginary dielectric functions with respect to energy are compared. Etching-off the surface oxide is effective in determining the correct film thickness and dielectric functions. Complex refractive indices are obtained for films thinner than 50 nm. Calculated optical energy gap is found to increase for thinner films. The tendency is ascribed to the existence of a thin interface layer consisting of amorphous silicon and void. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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