| Autor: |
Masafumi Nakaishi, Masafumi Nakaishi, Kenji Sugishima, Kenji Sugishima |
| Zdroj: |
Japanese Journal of Applied Physics; November 1991, Vol. 30 Issue: 11 p3065-3065, 1p |
| Abstrakt: |
We investigated the reactive ion etching (RIE) of the Ta absorber on X-ray masks using a mixture of chlorine (Cl2) and chloroform (CHCl3) gases. To improve the pattern profiles, we used a gas mixture of chlorine (Cl2) and chloroform (CHCl3) which enhances deposition and protects side wall. We consistently obtained vertical side walls (90°±3°) with a Ta-to-resist etch-rate ratio (selectivity) of 7 and pattern edge roughness below 0.02 µm. The transfer accuracy was 0.00±0.04 µm (3 sigma) using 40% CHCl3and Cl2with a gas pressure of 0.2 Torr and power density of 0.8 W/cm2. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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