Autor: |
O'keeffe, Patrick, Komuro, Shuji, Den, Shoji, Morikawa, Takitaro, Yoshinobu Aoyagi, Yoshinobu Aoyagi |
Zdroj: |
Japanese Journal of Applied Physics; November 1991, Vol. 30 Issue: 11 p3164-3164, 1p |
Abstrakt: |
A new compact ECR plasma source has been developed. The characteristics of this source and it's applications are discussed. Irradiation by oxygen radicals O*for the oxidation during deposition process was found to produce high quality superconducting thin films with increased characteristic temperatures. Hydrogen radical H*beam cleaning of GaAs substrate surfaces was achieved at temperatures as low as 100°C. |
Databáze: |
Supplemental Index |
Externí odkaz: |
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