Confirmation of Aluminum-Induced Negative Charge in Native Silicon Dioxide
| Autor: | Munakata, Hirofumi Shimizu |
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| Zdroj: | Japanese Journal of Applied Physics; October 1991, Vol. 30 Issue: 10 p2466-2466, 1p |
| Abstrakt: | Ac surface photovoltage (SPV) disappears in p-type silicon (Si) wafers rinsed with an aluminum (Al)-contaminated RCA solution, while high ac SPV appears in n-type Si wafers. This is because large negative charge due to the metal impurity causes an accumulation region at the p-type wafer surface. The negative charge vanishes with the removal of the oxide. This means that Al resides in the native oxide. |
| Databáze: | Supplemental Index |
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