| Autor: |
Suemasu, Takashi, Yasuyuki Miyamoto, Yasuyuki Miyamoto, Kazuhito Furuya, Kazuhito Furuya |
| Zdroj: |
Japanese Journal of Applied Physics; October 1991, Vol. 30 Issue: 10 pL1702-L1702, 1p |
| Abstrakt: |
It is shown that the combined surface treatment of a (NH4)2Sxtreatment and preheating improves the regrown heterointerface of n-GaInAs/i-InP in organometallic vapor phase epitaxy (OMVPE). Properties of the regrown heterointerface were evaluated from voltage-current (V-I) characteristics of the n-GaInAs/i-InP/n-GaInAs tunneling diode. This surface treatment is useful for the fabrication of ultrafine-size structures of quantum-wire, -box and electron wave devices. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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