| Autor: |
Chung, Gwiy-Sang, Kawahito, Shoji, Ishida, Makoto, Suzaki, Tetsuo, Tetsuro Nakamura, Tetsuro Nakamura |
| Zdroj: |
Japanese Journal of Applied Physics; July 1991, Vol. 30 Issue: 7 p1378-1378, 1p |
| Abstrakt: |
Using epitaxial Al2O3films as an etch-stop layer, Si-on-insulator (SOI) pressure sensors have been fabricated on a heteroepitaxially grown Si(100)/Al2O3(100)/Si(100) substrate. The epitaxially stacked SOI structure was formed by successive chemical vapor deposition of Al2O3and Si on a 2-inch Si(100) substrate. The implemented sensors have a high sensitivity of 0.28 mV/V·kPa for a 93.3 kPa full-scale pressure range, with a nonlinearity and hysteresis of less than +0.2%FS and +0.09%FS, respectively. The pressure sensitivity variation can be controlled to within a standard deviation of ±2.0%. The shifts in sensitivity and offset voltage of the fabricated pressure sensors are less than -0.36% and +0.22%, respectively, in the temperature ranges of from -20°C to +100°C. The epitaxially stacked SOI structure is a highly promising material for the development of high-resolution pressure sensors with no-variation pressure sensitivity. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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