| Autor: |
Kazuo Imai, Kazuo Imai |
| Zdroj: |
Japanese Journal of Applied Physics; June 1991, Vol. 30 Issue: 6 p1154-1154, 1p |
| Abstrakt: |
This paper proposes a new wafer thinning method in bonding silicon-on-insulator (SOI) technology. With this new method, thermal oxidation is performed on thin boron-doped Si films after highly selective back-etching to reduce the boron concentration in the film. The boron concentration in the silicon layer on oxide can be decreased more than 2 figures under proper thermal oxidation conditions. A 90-nm-thick silicon layer with 4×1017/cm3boron concentration was formed on an insulator by this method. Transmission electron microscope (TEM) observation shows that the silicon layer has a highly crystalline quality. It is also found that the reflow of borophosphosilicate glass (BPSG) can effectively fill in the small surface gaps during wafer bonding. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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