| Autor: |
Ossart, Pierre, Brasil, Maria J. S. P., Cardoso, Lisandro P., Ganière, Jean D., Horiuchi, Luciano, Decobert, Jean, Sacilotti, Marco |
| Zdroj: |
Japanese Journal of Applied Physics; May 1991, Vol. 30 Issue: 5 pL783-L783, 1p |
| Abstrakt: |
We report, for the first time, a direct relationship between the composition fluctuation on the ternary layer grown by atmospheric pressure metalorganic vapor-phase epitaxy (AP-MOVPE) and the pulsed character of high-vapor-pressure metalorganic (MO) flows. We show that the grwoth rates of GaAlAs and GaInAs layers, grown with trimethylgallium (TMG) and triethylgallium (TEG) sources, are of tens of Å per bubble for the methyl case and a few Å for the ethyl one. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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