| Autor: |
Mochizuki, Kazuhiro, Masuda, Hiroshi, Kawata, Masahiko, Katsuhiko Mitani, Katsuhiko Mitani, Chuushiro Kusano, Chuushiro Kusano |
| Zdroj: |
Japanese Journal of Applied Physics; February 1991, Vol. 30 Issue: 2 pL266-L266, 1p |
| Abstrakt: |
The surface recombination current with an ideality factor of unity was clearly observed in AlGaAs/GaAs abrupt heterojunction bipolar transistors (HBTs) with the uniform base structure. This was derived from the difference in the base current of HBTs with and without a surface passivation layer of depleted AlGaAs. It had a linear dependence on the emitter mesa perimeter and had no component with an ideality factor of two even at a low base-emitter bias. The results were explained by a simple analysis assuming a high surface recombination velocity. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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