| Autor: |
Haga, Takashi, Miyata, Noriyuki, Moriki, Kazunori, Fujisawa, Masami, Kaneoka, Tatsunori, Hirayama, Makoto, Matsukawa, Takayuki, Hattori, Takeo |
| Zdroj: |
Japanese Journal of Applied Physics; December 1990, Vol. 29 Issue: 12 pL2398-L2398, 1p |
| Abstrakt: |
The contribution of SiO2/Si interface structure to optical absorption below the optical absorption edge of fused quartz was studied by measuring the reflectance of thermally grown ultrathin silicon oxide films. From the modified Kramers-Kronig analysis of reflectance, it was found that optical absorption at the photon energy of 7.8 eV arises from Si-Si bonds in the oxide film within 6 nm of the interface and does not depend on the oxidation temperature. Approximate areal density of Si-Si bond is 7×1014cm-2 |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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